Effects Of Shallow Versus Deep Acceptors On The Photo Response Of P-Type Gallium Antimonide(Gasb) Semiconductor

Abstract

In This Study The Effects Of Shallow Versus Deep Acceptors On The Photo Response Of P-Type Gallium Antimonide (Gasb) Semiconductors From The Simulation Of The Temperature Dependence Of The Majority Carrier Concentrations Measured Using Hall Effect Measurements. By Fitting The Measured Values Of The Temperature Dependence Of The Majority Carrier Concentrations With The Theoretical Description Of The Data Obtained From The Theoretical Simulation Of The Ionization Of The Deep And Shallow Acceptors, The Energies Corresponding To Each Acceptor Can Be Determined For Different Doping Level Samples. The Contribution Of Shallow Level Acceptors To The Thermal Equilibrium Carrier Density Is Very High As Compared To The Deep Level Acceptors Of The Same Impurity Concentration. This Can Be Extended To The Determination Of Radiative Excess Carrier Lifetime For The Description Of The Photo-Response Of The Material Versus Shallow And Deep Acceptors.