Study and Analysis of Dielectric Modulated–Double Gate Tunnel Field Effect Transistor Structure for Biosensors Applications

Abstract

Within several types of innovative bio-sensing technologies, label free dielectric modulated field-effect transistor (DM-FET) based biosensors view out because of their appealing properties, including such Ultra-sensitivity detection, mass-production capacity, and low cost of manufacture, and batch testing facility. Different types of DG-FET based biosensor including ion-sensitive-FET, silicon-nanowire-FET based biosensors had faced problems like short channel effect, low sensitivity and low response time. This work investigates the Dielectric Modulated Tunnel Field Effect Transistor structure for biosensor applications, and for simulation and performance characterization, ATLAS Technology computer-aided design (TCAD) simulator tool is used to simulate and characterize the biosensor. The electrostatics and electrical properties of tunnel field effect transistors are addressed in this work. Because this research area is not much explored. In particular, we focused on the sensitivity and ambi-polarity of tunnel field-effect sensors. Further we analyzed the effect of biosensor performance for sensing surface properties including Electric Field strength, Transfer Characteristics, Ion/Ioff ratio, various other related parameters. The critical difficulties about device design and practical limits have been addressed. At the end, the simulation results shows that the ambipolar current sensitivity of the proposed structure have shown good results. Finally, the examined Double Gate-Full Both Side Cavity-Tunnel Field Effect Transistor (DG-FBSC-TFET)-structure for biosensor application has been identified as a promising contender for future biosensors for point-to point care disease diagnoses.