Determination Of Transient Radiative Excess Carrier Lifetimes In Direct Band Gap Semiconductors In The Presence And Absence Of Illumination

Abstract

In this thesis, we models the optical generation and transient radiative recombination excess carrier lifetimes in direct band gap semiconductors (GaSb) during illumination and after switching off the illumination by calculating the absorption coefficient and also describe the significance of gallium antimonide (GaSb). The time dependence of excess carrier density and excess carrier lifetimes are determined by using the doping level 1017 cm-3 and absorption rate 1.21x1024 cm-3s-1.The transient mean times for each excess carrier lifetimes to reach their steady-state values are determined. In addition to this the excess carrier lifetime, as well as being of direct relevance to device performance, is also a critical parameter in determining the quality of the semiconductor system as it can provide information on the electrical activity of defects present in material.