Determination Of The Photoconductivity In The Bulk Of Direct Small Band Gap Gasb Semiconductor

Abstract

The Purpose Of This Thesis Is To Determine The Photo-Response Observed From Bulk Of Gallium Antimonide (Gasb ) Semiconductors Which Is Described Through The Simulation Of Excess Carrier Lifetimes Corresponding To The Radiative, Auger And Shockley Read Hall Recombination Mechanisms Dependence Of Excess Lifetime As Function Of Excess Concentration And Absorption Coefficient. To Conclude Some Of Our Results Are Quite New And Requires Future Studies. First, The Photon Absorption Effect On Bulk Semiconductor Were Described, If The Penetration Depth Surface Is Small: Both The Absorption Coefficient And Absorption Photon Rate Per Incident Photon Is Large Or Increased. If The Penetration Depths Surface Is Large Or Goes To Infinity: Both The Absorption Coefficient And Absorption Photon Rate Per Incident Photon Is Small Or Decrease, Where The Photon Absorption Rate Approximately Goes To Decrease Or Zero, Because The Incident Photon Directly Passes Through The Material, The Material Is Said To Be Transparent Photon, First Electron?��?Hole Pair Are Not Produced Or Absorbed. In This Work Specifically Derive And Described The Mathematical Expression For Excess Carrier Lifetime Of Radiative, Auger And Srh Under Low Injection And Injection Level From Bulk Semiconductors Under Thermal And Non-Thermal Equilibriums Were Described. Finally The Result Of Srh Lifetime Is Dominant At Low Injection In A Sample Of Low Doping Regions Produced Heat Or Phonon.