The Effects of Electric Field on the thermal Equilibrium properties of p-type Gallium Arsenide (GaAs) semiconductor

Abstract

In this study, the effects of electric field on the thermal equilibrium carrier properties on the photoresponse of Gallium Arsenide (GaAs) semiconductor is investgated under different conditions. Hence, the variation of energy, change of energy, thermal carrier concentration and excess carrier lifetime as function of position were determined. The variation in electrical properties and the photoresponses of the bulk of the semiconductor is described by applying constant, linearly varying, cubically varying and quadratically varying electric field with position. The result revealed that, high variations in the electrical properties and the photoresponses occur for the case when the constant field is applied. The variations in the electrical properties and the photoresponses decrease with increasing the variation in the applied electric field. Nevertheless, these variations are unaffected by the doping level of the material, as position was the determinant parameter.